Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SSM6J512NU,LF
Part Number | SSM6J512NU,LF |
Datasheet | SSM6J512NU,LF datasheet |
Description | MOSFET P-CH 12V 10A UDFN6B |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVII |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
Rds On (Max) @ Id, Vgs | 16.2 mOhm @ 4A, 8V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-UDFNB (2x2) |
Package / Case | 6-WDFN Exposed Pad |