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Product Introduction

SIA456DJ-T1-GE3

Part Number
SIA456DJ-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 200V 2.6A SC70-6
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
8755pcs Stock Available.

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Product Specifications

Part Number SIA456DJ-T1-GE3
Datasheet SIA456DJ-T1-GE3 datasheet
Description MOSFET N-CH 200V 2.6A SC70-6
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.38 Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 100V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6

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