Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / IMD1AT108
Part Number | IMD1AT108 |
Datasheet | IMD1AT108 datasheet |
Description | TRANS NPN/PNP PREBIAS 0.3W SMT6 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SMT6 |