Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA20SICP12-247

Product Introduction

GA20SICP12-247

Part Number
GA20SICP12-247
Manufacturer/Brand
GeneSiC Semiconductor
Description
TRANS SJT 1200V 45A TO247
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
1500pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number GA20SICP12-247
Description TRANS SJT 1200V 45A TO247
Manufacturer GeneSiC Semiconductor
Series -
Part Status Obsolete
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 50 mOhm @ 20A
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3091pF @ 800V
FET Feature -
Power Dissipation (Max) 282W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package / Case TO-247-3

Latest Products for Transistors - FETs, MOSFETs - Single

IAUT240N08S5N019ATMA1

Infineon Technologies

MOSFET N-CH 75V 8HSOF

IAUT260N10S5N019ATMA1

Infineon Technologies

MOSFET75V120V

IAUT300N08S5N012ATMA2

Infineon Technologies

MOSFET N-CH 75V 120V 8HSOF

IAUT300N08S5N014ATMA1

Infineon Technologies

80V 300A 1.4MOHM TOLL

IPLU250N04S41R7XTMA1

Infineon Technologies

MOSFET N-CH 8HSOF

IPLU300N04S41R1XTMA1

Infineon Technologies

MOSFET N-CH 8HSOF