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| Part Number | IPB032N10N5ATMA1 |
| Datasheet | IPB032N10N5ATMA1 datasheet |
| Description | MOSFET N-CH 100V 166A TO263-7 |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 166A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 83A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 125µA |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6970pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |