Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / UMG4N-7

Product Introduction

UMG4N-7

Part Number
UMG4N-7
Manufacturer/Brand
Diodes Incorporated
Description
TRANS 2NPN PREBIAS 0.15W SOT353
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
24pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number UMG4N-7
Description TRANS 2NPN PREBIAS 0.15W SOT353
Manufacturer Diodes Incorporated
Series -
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package SOT-353

Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased

BCR119SE6433HTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

BCR119SH6327XTSA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

BCR119SH6433XTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

BCR129SE6327HTSA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

BCR129SH6327XTSA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

BCR133SB6327XT

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363