Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFH320N10T2
Part Number | IXFH320N10T2 |
Datasheet | IXFH320N10T2 datasheet |
Description | MOSFET N-CH 100V 320A TO-247 |
Manufacturer | IXYS |
Series | HiPerFET™, TrenchT2™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 320A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 26000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1000W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Package / Case | TO-247-3 |