Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTT68P20T
Part Number | IXTT68P20T |
Datasheet | IXTT68P20T datasheet |
Description | MOSFET P-CH 200V 68A TO-268 |
Manufacturer | IXYS |
Series | TrenchP™ |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 380nC @ 10V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 33400pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 568W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268 |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |