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| Part Number | SPB16N50C3ATMA1 | 
| Datasheet | SPB16N50C3ATMA1 datasheet | 
| Description | MOSFET N-CH 560V 16A TO-263 | 
| Manufacturer | Infineon Technologies | 
| Series | CoolMOS™ | 
| Part Status | Obsolete | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 560V | 
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 10A, 10V | 
| Vgs(th) (Max) @ Id | 3.9V @ 675µA | 
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V | 
| FET Feature | - | 
| Power Dissipation (Max) | 160W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | PG-TO263-3-2 | 
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |