Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK12P60W,RVQ
Part Number | TK12P60W,RVQ |
Datasheet | TK12P60W,RVQ datasheet |
Description | MOSFET N CH 600V 11.5A DPAK |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 340 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |