Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM80N950CI C0G
Part Number | TSM80N950CI C0G |
Datasheet | TSM80N950CI C0G datasheet |
Description | MOSFET N-CHANNEL 800V 6A ITO220 |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19.6nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 691pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220AB |
Package / Case | TO-220-3 Full Pack, Isolated Tab |