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| Part Number | SSM6J207FE,LF |
| Datasheet | SSM6J207FE,LF datasheet |
| Description | MOSFET P-CH 30V 1.4A ES6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSII |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 251 mOhm @ 650mA, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 137pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 (1.6x1.6) |
| Package / Case | SOT-563, SOT-666 |