Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSD816SNH6327XTSA1
Part Number | BSD816SNH6327XTSA1 |
Datasheet | BSD816SNH6327XTSA1 datasheet |
Description | MOSFET N-CH 20V 1.4A SOT363 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.4A, 2.5V |
Vgs(th) (Max) @ Id | 0.95V @ 3.7µA |
Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 2.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT363-6 |
Package / Case | 6-VSSOP, SC-88, SOT-363 |