Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI120N06S4H1AKSA2
Product Introduction
IPI120N06S4H1AKSA2
- Part Number
- IPI120N06S4H1AKSA2
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH TO262-3
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- Automotive, AEC-Q101, OptiMOS™
- Quantity
- 5529pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPI120N06S4H1AKSA2 |
| Datasheet | IPI120N06S4H1AKSA2 datasheet |
| Description | MOSFET N-CH TO262-3 |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 21900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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