Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SSM6K202FE,LF
Part Number | SSM6K202FE,LF |
Datasheet | SSM6K202FE,LF datasheet |
Description | MOSFET N-CH 30V 2.3A ES6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 1.5A, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ES6 (1.6x1.6) |
Package / Case | SOT-563, SOT-666 |