
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SSM6K202FE,LF

| Part Number | SSM6K202FE,LF |
| Datasheet | SSM6K202FE,LF datasheet |
| Description | MOSFET N-CH 30V 2.3A ES6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 1.5A, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 (1.6x1.6) |
| Package / Case | SOT-563, SOT-666 |