Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FF6MR12W2M1B11BOMA1
Part Number | FF6MR12W2M1B11BOMA1 |
Description | MOSFET MODULE 1200V 200A |
Manufacturer | Infineon Technologies |
Series | CoolSiC™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
Rds On (Max) @ Id, Vgs | 5.63 mOhm @ 200A, 15V |
Vgs(th) (Max) @ Id | 5.55V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |
Power - Max | 20mW (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | AG-EASY2BM-2 |