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Part Number | SSM3K106TU(TE85L) |
Datasheet | SSM3K106TU(TE85L) datasheet |
Description | MOSFET N-CH 20V 1.2A UFM |
Manufacturer | Toshiba Semiconductor and Storage |
Series | π-MOSVI |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 310 mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UFM |
Package / Case | 3-SMD, Flat Leads |