Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SA965-O(TE6,F,M)
Product Introduction
2SA965-O(TE6,F,M)
- Part Number
- 2SA965-O(TE6,F,M)
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS PNP 800MA 120V TO226-3
- Category
- Transistors - Bipolar (BJT) - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 7598pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | 2SA965-O(TE6,F,M) |
| Datasheet | 2SA965-O(TE6,F,M) datasheet |
| Description | TRANS PNP 800MA 120V TO226-3 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Power - Max | 900mW |
| Frequency - Transition | 120MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | LSTM |
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