Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMN10H170SVT-13
Part Number | DMN10H170SVT-13 |
Datasheet | DMN10H170SVT-13 datasheet |
Description | MOSFET N-CH 100V 2.6A TSOT26 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1167pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSOT-26 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |