
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSTB60BDW1T1

| Part Number | NSTB60BDW1T1 |
| Datasheet | NSTB60BDW1T1 datasheet |
| Description | TRANS NPN PREBIAS/PNP SOT363 |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 140MHz |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |