Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPH7R006PL,L1Q
Part Number | TPH7R006PL,L1Q |
Datasheet | TPH7R006PL,L1Q datasheet |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSIX-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 10A, 4.5V |
Vgs(th) (Max) @ Id | 2.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1875pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 81W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP Advance (5x5) |
Package / Case | 8-PowerVDFN |