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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2107ENGRT
Part Number | EPC2107ENGRT |
Description | GAN TRANS 3N-CH 100V BUMPED DIE |
Manufacturer | EPC |
Series | eGaN® |
Part Status | Active |
FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 9-VFBGA |
Supplier Device Package | 9-BGA (1.35x1.35) |