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Product Introduction

EPC2107ENGRT

Part Number
EPC2107ENGRT
Manufacturer/Brand
EPC
Description
GAN TRANS 3N-CH 100V BUMPED DIE
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
9344pcs Stock Available.

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Product Specifications

Part Number EPC2107ENGRT
Description GAN TRANS 3N-CH 100V BUMPED DIE
Manufacturer EPC
Series eGaN®
Part Status Active
FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA
Rds On (Max) @ Id, Vgs 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V, 7pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 9-VFBGA
Supplier Device Package 9-BGA (1.35x1.35)

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