
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI1062X-T1-GE3
Part Number | SI1062X-T1-GE3 |
Datasheet | SI1062X-T1-GE3 datasheet |
Description | MOSFET N-CH 20V SC-89 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 220mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-3 |
Package / Case | SC-89, SOT-490 |