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Product Introduction

SI7792DP-T1-GE3

Part Number
SI7792DP-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 30V P-PACK SO-8
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
SkyFET®, TrenchFET® Gen III
Quantity
8166pcs Stock Available.

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Product Specifications

Part Number SI7792DP-T1-GE3
Description MOSFET N-CH 30V P-PACK SO-8
Manufacturer Vishay Siliconix
Series SkyFET®, TrenchFET® Gen III
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4.735nF @ 15V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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