Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SJ438(AISIN,Q,M)
Part Number | 2SJ438(AISIN,Q,M) |
Datasheet | 2SJ438(AISIN,Q,M) datasheet |
Description | MOSFET P-CH |
Manufacturer | Toshiba Semiconductor and Storage |
Series | * |
Part Status | Obsolete |
FET Type | - |
Technology | - |
Drain to Source Voltage (Vdss) | - |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | Through Hole |
Supplier Device Package | TO-220NIS |
Package / Case | TO-220-3 Full Pack |