Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PSMN102-200Y,115
Part Number | PSMN102-200Y,115 |
Datasheet | PSMN102-200Y,115 datasheet |
Description | MOSFET N-CH 200V 21.5A LFPAK |
Manufacturer | Nexperia USA Inc. |
Series | TrenchMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 21.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 102 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 30.7nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1568pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 113W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Package / Case | SC-100, SOT-669 |