Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / DMN3190LDW-13
Part Number | DMN3190LDW-13 |
Datasheet | DMN3190LDW-13 datasheet |
Description | MOSFET 2N-CH 30V 1A SOT363 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1A |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 1.3A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 20V |
Power - Max | 320mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |