Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SPB17N80C3ATMA1
Part Number | SPB17N80C3ATMA1 |
Datasheet | SPB17N80C3ATMA1 datasheet |
Description | MOSFET N-CH 800V 17A D2PAK |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 177nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 227W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |