Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI7858ADP-T1-GE3
Part Number | SI7858ADP-T1-GE3 |
Datasheet | SI7858ADP-T1-GE3 datasheet |
Description | MOSFET N-CH 12V 20A PPAK SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 29A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |