Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTP1R4N100P
Part Number | IXTP1R4N100P |
Datasheet | IXTP1R4N100P datasheet |
Description | MOSFET N-CH 1000V 1.4A TO-220 |
Manufacturer | IXYS |
Series | Polar™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 17.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |