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| Part Number | TK20V60W5,LVQ |
| Datasheet | TK20V60W5,LVQ datasheet |
| Description | MOSFET N-CH 600V 20A 5DFN |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 300V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Package / Case | 4-VSFN Exposed Pad |