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Product Introduction

TPN4R712MD,L1Q

Part Number
TPN4R712MD,L1Q
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 20V 36A 8TSON ADV
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
U-MOSVI
Quantity
5127pcs Stock Available.

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Product Specifications

Part Number TPN4R712MD,L1Q
Datasheet TPN4R712MD,L1Q datasheet
Description MOSFET P-CH 20V 36A 8TSON ADV
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVI
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN

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