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Part Number | IPB180P04P403ATMA1 |
Datasheet | IPB180P04P403ATMA1 datasheet |
Description | MOSFET P-CH TO263-7 |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 410µA |
Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 17640pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7-3 |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |