Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI2319DS-T1-GE3

Product Introduction

SI2319DS-T1-GE3

Part Number
SI2319DS-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET P-CH 40V 2.3A SOT23-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
3193pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SI2319DS-T1-GE3
Datasheet SI2319DS-T1-GE3 datasheet
Description MOSFET P-CH 40V 2.3A SOT23-3
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 20V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3

Latest Products for Transistors - FETs, MOSFETs - Single

BSS139H6327XTSA1

Infineon Technologies

MOSFET N-CH 250V 100MA SOT23

SI2312CDS-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 6A SOT-23

SI2333CDS-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 7.1A SOT23-3

SQ2310ES-T1_GE3

Vishay Siliconix

MOSFET N-CH 20V 6A SOT23

BSS123NH6327XTSA1

Infineon Technologies

MOSFET N-CH 100V 0.19A SOT-23

FDV305N

ON Semiconductor

MOSFET N-CH 20V 0.9A SOT-23