Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ2310ES-T1_GE3
Part Number | SQ2310ES-T1_GE3 |
Datasheet | SQ2310ES-T1_GE3 datasheet |
Description | MOSFET N-CH 20V 6A SOT23 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 485pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |