
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI7726DN-T1-GE3

| Part Number | SI7726DN-T1-GE3 | 
| Datasheet | SI7726DN-T1-GE3 datasheet | 
| Description | MOSFET N-CH 30V 35A 1212-8 | 
| Manufacturer | Vishay Siliconix | 
| Series | SkyFET®, TrenchFET® | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 10A, 10V | 
| Vgs(th) (Max) @ Id | 2.6V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V | 
| FET Feature | - | 
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) | 
| Operating Temperature | -50°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | PowerPAK® 1212-8 | 
| Package / Case | PowerPAK® 1212-8 |