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Part Number | IPB80N06S4L05ATMA1 |
Datasheet | IPB80N06S4L05ATMA1 datasheet |
Description | MOSFET N-CH 60V 80A TO263-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Discontinued at Digi-Key |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 8180pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 107W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |