Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPCF8B01(TE85L,F,M
Part Number | TPCF8B01(TE85L,F,M |
Datasheet | TPCF8B01(TE85L,F,M datasheet |
Description | MOSFET P-CH 20V 2.7A VS-8 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSIII |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 330mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VS-8 (2.9x1.5) |
Package / Case | 8-SMD, Flat Lead |