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Product Introduction
SIHB120N60E-GE3
- Part Number
- SIHB120N60E-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET N-CHAN 650V D2PAK TO-263
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- E
- Quantity
- 52pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SIHB120N60E-GE3 |
| Description | MOSFET N-CHAN 650V D2PAK TO-263 |
| Manufacturer | Vishay Siliconix |
| Series | E |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1562pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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