Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSBC123JPDP6T5G
Product Introduction
NSBC123JPDP6T5G
- Part Number
- NSBC123JPDP6T5G
- Manufacturer/Brand
- ON Semiconductor
- Description
- TRANS 2NPN PREBIAS 0.339W SOT963
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 8108pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | NSBC123JPDP6T5G |
| Datasheet | NSBC123JPDP6T5G datasheet |
| Description | TRANS 2NPN PREBIAS 0.339W SOT963 |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 339mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-963 |
| Supplier Device Package | SOT-963 |
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