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| Part Number | IPD70R600CEAUMA1 | 
| Datasheet | IPD70R600CEAUMA1 datasheet | 
| Description | MOSFET N-CH TO252-3 | 
| Manufacturer | Infineon Technologies | 
| Series | CoolMOS™ | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 700V | 
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 1A, 10V | 
| Vgs(th) (Max) @ Id | 3.5V @ 0.21mA | 
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 474pF @ 100V | 
| FET Feature | Super Junction | 
| Power Dissipation (Max) | 86W (Tc) | 
| Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | PG-TO252-3 | 
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |