Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTA123JKAT246
Part Number | DTA123JKAT246 |
Datasheet | DTA123JKAT246 datasheet |
Description | TRANS PREBIAS PNP 200MW SOT346 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SOT-346 |
Supplier Device Package | SOT-346 |