Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FD200R12PT4B6BOSA1
Part Number | FD200R12PT4B6BOSA1 |
Datasheet | FD200R12PT4B6BOSA1 datasheet |
Description | IGBT MODULE VCES 1200V 200A |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 300A |
Power - Max | 1100W |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 200A |
Current - Collector Cutoff (Max) | 15µA |
Input Capacitance (Cies) @ Vce | 12.5nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |