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Part Number | TPCC8008(TE12L,QM) |
Description | MOSFET N-CH 30V 25A 8TSON |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1A |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta), 30W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |