Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSBC123TDP6T5G
Part Number | NSBC123TDP6T5G |
Datasheet | NSBC123TDP6T5G datasheet |
Description | TRANS 2NPN PREBIAS 0.339W SOT963 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 339mW |
Mounting Type | Surface Mount |
Package / Case | SOT-963 |
Supplier Device Package | SOT-963 |