Product Introduction
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See Product Specifications
Product Specifications
Part Number |
EPC2111 |
Datasheet |
EPC2111 datasheet |
Description |
GAN TRANS ASYMMETRICAL HALF BRID |
Manufacturer |
EPC |
Series |
- |
Part Status |
Active |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
16A (Ta) |
Rds On (Max) @ Id, Vgs |
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs |
2.2nC @ 5V, 5.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
230pF @ 15V, 590pF @ 15V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
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