Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI5517DU-T1-E3
Part Number | SI5517DU-T1-E3 |
Datasheet | SI5517DU-T1-E3 datasheet |
Description | MOSFET N/P-CH 20V 6A CHIPFET |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
Power - Max | 8.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® ChipFET™ Dual |
Supplier Device Package | PowerPAK® ChipFet Dual |