Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMN3026LVTQ-13
Part Number | DMN3026LVTQ-13 |
Datasheet | DMN3026LVTQ-13 datasheet |
Description | MOSFET N-CH 30V 6.6A TSOT26 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 643pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSOT-26 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |