Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIS106DN-T1-GE3
Part Number | SIS106DN-T1-GE3 |
Datasheet | SIS106DN-T1-GE3 datasheet |
Description | MOSFET N-CHAN 60V POWERPAK 1212- |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta), 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8S |
Package / Case | PowerPAK® 1212-8S |