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| Part Number | IRF8302MTRPBF |
| Datasheet | IRF8302MTRPBF datasheet |
| Description | MOSFET N-CH 30V 31A MX |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 190A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 31A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6030pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MX |
| Package / Case | DirectFET™ Isometric MX |