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| Part Number | IRF8302MTRPBF | 
| Datasheet | IRF8302MTRPBF datasheet | 
| Description | MOSFET N-CH 30V 31A MX | 
| Manufacturer | Infineon Technologies | 
| Series | HEXFET® | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 190A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 31A, 10V | 
| Vgs(th) (Max) @ Id | 2.35V @ 150µA | 
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 4.5V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 6030pF @ 15V | 
| FET Feature | - | 
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) | 
| Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | DIRECTFET™ MX | 
| Package / Case | DirectFET™ Isometric MX |